| 학회 |
한국고분자학회 |
| 학술대회 |
2018년 봄 (04/04 ~ 04/06, 대전컨벤션센터) |
| 권호 |
43권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Proton-Conductor-Gated MoS2 Transistors with Room Temperature Electron Mobility of ＞130 cm2V-1s-1 |
| 초록 |
Room temperature electron mobility of ＞130 cm2V-1s-1 is achieved for a few-layer MoS2 transistor by use of a polyanionic proton conductor as the top-gate dielectric of the device. The use of a proton conductor that inherently exhibits a cationic transport number close to 1 yields unipolar electron transport in the MoS2 channel. The high mobility value is attributed to the effective formation of an electric double layer by the proton conductor, which facilitates electron injection into the MoS2 channel, and to the effective screening of the charged impurities in the vicinity of the device channel. Through careful temperature-dependent transistor and capacitor measurements, we also confirm quenching of the phonon modes in the proton-conductor-gated MoS2 channel, which should also contribute to the achieved high mobility. These devices are then used to assemble a simple resistive-load inverter logic circuit, which can be switched at high frequencies above 1 kHz. |
| 저자 |
최용석1, 김현우1, 양지혜2, 신승원1, 엄숭호1, 이성주1, 강문성2, 조정호1
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| 소속 |
1성균관대, 2숭실대 |
| 키워드 |
MoS2; proton conductor; transistor; electron mobility; subthreshold swing
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| E-Mail |
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