| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 봄 (04/07 ~ 04/08, 대전컨벤션센터) |
| 권호 |
36권 1호 |
| 발표분야 |
분자전자용 소재 및 소자 |
| 제목 |
The effect of dipoles of dielectric surface treated self assembled monolayers on the a-IGZO based thin film transistors. |
| 초록 |
Metal oxide semiconductors have several advantages such as transparency, high transistor performance and air stability over amorhous silicon and organic semiconductors. In-Ga-Zn-O system(IGZO) semiconductor is one of the metal oxide and also has high electron conductivity. In this study, a change of characteristics of the IGZO-based TFT is examined according to the different dielectric functional group. Our team chooses three different self assembled monolayers, aminopropyltriethoxysilane(APS) which is electron donating groups, mercaptopropyltriethoxysilane(MPS) and perfluorooctyltriethoxysilane(PFOTES) which are electron withdrawing group. |
| 저자 |
박미정1, 장재영1, 박선욱1, 김지예1, 성지현2, 황지영2, 박찬언1
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| 소속 |
1포항공대, 2LG화학 |
| 키워드 |
a-IGZO; dielectric surface; functional groups
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| E-Mail |
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