| 학회 | 한국재료학회 |
| 학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 | 22권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Study of AlInSb epitaxial layers grown by metal organic chemical vapor deposition for AlInSb/InSb barrier infrared photodiodes |
| 초록 | AlxIn1-xSb tertiary alloy is of interest for its potential applications in a variety of optoelectronic devices such as infrared detectors, light emitting diodes as well as other semiconductor heterostructures because it has a controllability of band gap from 0.18 eV (InSb) to 1.62 eV (AlSb) at room temperature [1-3]. In this study, AlxIn1-xSb layers were grown on an InSb (001) substrate by low-pressure metalorganic chemical vapor deposition using tritertiarybutyl aluminium (TTBAl), trimethylindium (TMIn), and trimethylantimony (TMSb) as source materials for Al, In, and Sb, respectively. These layers were grown varying TTBAl/(TTBAl +TMIn) ratio in the range from 0.57 to 0.76 at a growth temperature of 490 ˚C and a TMSb/TMIn ratio of 8.8. We were successful in obtaining high crystal quality Al0.10In0.90Sb layers with a mirror-like smooth surface, which were confirmed by XRD, SEM, and AFM measurements. At higher Al composition conditions, the surface morphology and crystal quality were degraded. This suggests that an increase of Al incorporation into AlxIn1-xSb layer caused an increase of Al-containing impurities such as Al-O and Al-C, and the lattice mismatch [4]. [1] R.M. Biefeld, A.A Allerman and M.W. Pelczynski, Appl. Phys. Lett. 68, 932 (1996) [2] S.R. Kurtz, A.A. Allerman and R.M. Biefeld, Appl. Phys. Lett. 70, 3188 (1997) [3] M.K. Saker, D.M. Whittaker, M.S. Skolnick, C.F.McConville, C.R. Whitehouse, S.J. Barnett, A.D. Pitt, A.G. Cullis and G.M. Williams, Appl. Phys. Lett. 65 1118 (1994) [4] R.M BIEFELD, Materials Science and Engineering R 36, 105 (2002) |
| 저자 | 박환열1, 박세훈1, 금대명1, 박용조2, 윤의준1 |
| 소속 | 1서울대, 2차세대융합기술(연) |
| 키워드 | AlInSb; InSb; MOCVD; photodetector; TTBAl |
