| 학회 |
한국재료학회 |
| 학술대회 |
2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 |
23권 2호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Enhanced silicon surface passivation of atomic layer deposited Al2O3 films with surface treatment |
| 초록 |
We have investigated the silicon surface passivation of atomic layer deposited Al2O3 films with surface treatment. The Al2O3 films were deposited by using atomic layer deposition (ALD) and the thickness of films was less than 1.5nm. To confirming enhancement of surface passivation performance, we proceed the surface treatment through the chemical solution before deposition of the Al2O3 films. The passivation performances were characterized by quasi-steady-static photoconductance (QSSPC) measurement of the effective carrier lifetime and implied open circuit voltage (Voc). The Al2O3 films on surface treated wafer showed improved surface passivation performance compared with Al2O3 films on untreated wafer. In addition, capacitance-voltage(C-V) data clearly showed that the chemical oxide as result of the surface treatment provides good interface quality and bonding uniformity of Al2O3 film. Based on the results, the Al2O3 films with surface treatment are a feasible means of improving the passivation performance of crystalline Si solar cells. |
| 저자 |
Ham Cho Rom Cha1, Hyo Sik Chang2
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| 소속 |
1Graduate School of Energy Science and Technology, 2Chungnam National Univ. |
| 키워드 |
Tunnel oxide; Surface passivation; Atomic layer deposition(ALD); Aluminum oxide(Al<SUB>2</SUB>O<SUB>3</SUB>); Chemical oxidation; Surface treatment
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| E-Mail |
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