| 학회 | 한국재료학회 |
| 학술대회 | 2005년 봄 (05/26 ~ 05/27, 무주리조트) |
| 권호 | 11권 1호 |
| 발표분야 | 나노 및 생체재료 |
| 제목 | 양극산화 알루미나 templates를 이용한 Si 기판 위 정렬된 GaAs nanodot의 MBE 성장 |
| 초록 | The growth of highly ordered nanodot arrays has been intensively studied in recent years for their unique properties of quantum effect in 0-dimensional shape. The anodized aluminum oxide(AAO) can be used as template for nanodots fabrication in the range of 25-300 ㎚. The AAO was prepared using two step anodic oxidation process from Al thin film with a thickness of 2 ㎛ deposited on Si (100) substrate. The synthesized nanohole arrays in AAO has uniform pores with the size of ~50 ㎚, and thickness of ~150 ㎚. Ordered GaAs nanodot arrays were grown using AAO template via Molecular beam epitaxy (MBE) at the condition of various substrate temperature (580-650 ℃), flux of Ga (1100-1115 ℃) and the growth time (15-40 minutes). The effecs of three parameters on the morphology of GaAs nanodots were measured by FE-SEM, XRD and Photoluminescence. This work was supported by BK21 and ERC. |
| 저자 | Se Young Jeong1, Fucheng Yu2, Moon Kyu Park3, Sung Wook Lee4, Dojin Kim1 |
| 소속 | 1Department of Material Science & Engineering, 2Chungnam National Univ., 3Deajeon 305-764, 4Korea |
| 키워드 | GaAs nanodot; nanodot; quantum dot; AAO; NCA; MBE |
