| 학회 | 한국재료학회 |
| 학술대회 | 2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 | 18권 1호 |
| 발표분야 | C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 | Improvement of Efficiency for the N-type Al emitter Solar Cell by Optimizing Doping Temperature |
| 초록 | The boron-oxygen pair has emerged one of the most critical causes for degradation of the p-type conventional solar cell. For this reason, the study of n-type solar cell has conducted in many laboratories, recently. So, the new silicon solar cell structure is presented in which the p-n junction is formed by alloying aluminum with n-type silicon and located at the back. The n-type silicon has an enormous potential for many applications in the solar cell industry. We studied 2 groups that both pyramid textured structure and planar structure. The n-type Cz Si had a resistivity of 430 Ω/□ and a thickness of 180 μm. After the initial etching and cleaning, wafers were diffused in a POCl3 furnace to form a front surface field (FSF) layer. Anti-reflection coating layer was deposited by using a low-frequency PECVD and it thickness was 80nm. Then, second etching was performed by KOH solution to remove the n+ layer at the back side of the cell and then, the Al and Ag paste were screen-printed. After the metallization, the samples co-fired and formed p+ emitter layer in a RTP system. We investigated the formation of FSF layer of the n-type Al emitter solar cell by varying doping temperature via simulation and experiment. The doping temperature was increased by 50 from 800 to 1050 °C. The result shows that the best power conversion efficiency (PCE) is the 16.51% and PCE was increased ~5% at 850°C compared to that 1050°C of doping temperature. It was found that enhancement was caused by the formation of shallow FSF layer at the condition of relatively low temperature. * This work was supported by IC Design Education Center (IDEC), energy R&D program (20093021010010) under the Korea Ministry of Knowledge Economy (MKE) and the Brain Korea 21 Project in 2012. |
| 저자 | Min-Ha Choi1, Seung-Wook Baek2, Hyun-Ki Yoon1, In-Ji Lee2, Gon-Sub Lee1, Jea-Gun Park2 |
| 소속 | 1Advanced Semiconductor Materials and Device Development Center, 2Hanyang Univ. |
| 키워드 | Solar cell; Al emitter; Back junction |
