| 초록 |
Zinc oxide (ZnO) is a II-VI semiconductor, which has drawn considerable attention due to its piezoelectric properties, wide bandgap (3.37 eV) and a large exciton binding energy of 60 meV. Recently, one-dimensional (1D) zinc oxide materials have received broad interest for the potential applications in optoelectronics, nano/microelectronics, sensors, transducers, and biomedicine. However, in the pursuit of next generation ZnO based nanodevices, it would be highly preferred if well-ordered ZnO nanowires could be aligned onto cheap, NEMS and CMOS compatible substrates, such as silicon. Unfortunately, the formation of well-aligned nanowires on a pure Si substrate is difficult because a large mismatch (~ 40%) exists between ZnO and Si. Here we report, the growth of vertically aligned ZnO nanowires on c-axis oriented AlN film. The aspect ratios of ZnO nanowires obtained on both AlN/Si and sapphire substrates were found similar. |
