| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | E. 환경/센서 재료 분과 |
| 제목 | Tellurium Thin Film on Porous p-type Silicon Wafer: Effect of Porosity on Gas Sensing Property of Tellurium-based Thin Film toward H2S gas |
| 초록 | Hydrogen sulfide (H2S) is a colorless, very poisonous, corrosive, flammable and explosive gas with a characteristic foul odor of rotten eggs. Long-term or low-level exposure can cause headaches, dizziness, and loss of consciousness or death. Therefore, the monitoring of H2S gas in real time is essential for safe working environments at room temperature to avoid unexpected fire. In this study, we demonstrated H2S gas sensor consisted with Te thin film deposited by the galvanic displacement reaction on silicon wafer as a low-cost and a heater-free room temperature operating gas sensor. The main advantage of Te deposition by GDR on silicon wafer is that the microstructure of the device can be easily tailored using various silicon architectures since Te layers grows on the surface of a silicon wafer. However, the response and recovery time was still high since the room temperature operation. To overcome this problem, the effect of the microstructure on the sensing properties was investigated and showed relatively faster response and recovery time. |
| 저자 | 황태연, 송요셉, 이지민, 좌용호 |
| 소속 | 한양대 |
| 키워드 | hydrogen sulfide; tellurium-based gas sensor; room temperature operation; microstructure; galvanic displacement reaction |
