| 학회 |
한국재료학회 |
| 학술대회 |
2004년 봄 (05/14 ~ 05/14, 강릉대학교) |
| 권호 |
10권 1호 |
| 발표분야 |
기타 |
| 제목 |
GaP 나노선의 전기적 특성 및 광전도 특성에 관한 연구 |
| 초록 |
We have fabricated GaP nanowire FETs with high quality single-crystalline GaP nanowires that were grown by a simple vapor deposition method. Gallium phospide (GaP) is a wide band gap semiconductor with an indirect energy gap, the size of 2.24 eV at room temperature and has an important application as a light emission device in the visible range. Using the fact that our GaP nanowires have a core-shell structure, we have used intrinsic gallium oxide layer of the nanowires as a gate dielectric material. The line gates have been incorporated into individual GaP nanowire by depositing Au top gate in between Au/Ti source-drain electrodes that were defined after oxide removal. The individual GaP nanowires exhibited n-type field effect with an on/off ratio as high as 105 at 280 K. They show both good field-effect modulation by a line gate bias voltage and optical switching-effect under ultra-violet (UV) expose with large on/off ratios. Such an opto-electrical property of our GaP nanowire FETs can be explained by two possible reasons, one is the electron-hole pair creation by UV absorption, and photo-desorption of the surface deposits (O2- and H2O- derived), which are responsible for a depletion layer in Ga2O3 shells. Detailed mechanisms will be discussed. |
| 저자 |
김병계1, 김주진1, 이정오2, 공기정2, 류병환2, 최영민2, 장현주2, 이철진3
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| 소속 |
1전북대, 2한국 화학(연), 3한양대 |
| 키워드 |
GaP; nanowire
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| E-Mail |
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