| 초록 |
Hole transporting materials based on Spiro centeredcompound (HTM 1A and HTM 1B) were synthesized by using Buchwald Hartwig and Suzuki cross coupling reaction with significant yields. Both the HTMs were showed higher decomposition temperature over 450 °C at 5% weight reduction and HTM 1B was revealed stable glass transition temperature of 180 °C for its regid structure. To understand the device properties, red phosphorescence based devices were fabricated by using HTM 1A and HTM 1B as hole transporting materials. Reference device was fabricated by using Spiro-NPB as hole transporting materials with the same device structure. HTM 1 B based device showed higher current and power efficiencies of 16.16 cd/A and 11.17 lm/W. Maximum external quantum efficiency (EQE) of HTM 1B based device was 13.64 % and which was higher than that of reference base device and HTM 1A. |
