| 초록 |
The planar type CH3NH3PbI3 perovskite solar cells with ZnO electron conductor was fabricated by room temperature spin-coating and subsequent heat-treatment at 150 oC. The ZnO based perovskite solar cells exhibited better efficiency deviation (15.96 ± 1.07 %) and less J-V hysteresis than conventional TiO2 electron conductor based cells (15.20 ± 1.23 %) because the ZnO based cell has 1.2 fold longer charge carriers’ life time (τn) than the ZnO base cell and the ZnO electron conductor has better electron conductivity (0.0031 mS·cm-1) than the TiO2 electron conductor (0.00006 mS·cm-1), thereby more balancing the electron flux and the hole flux. Due to the low temperature solution processibility of ZnO electron conductor, we could demonstrated highly efficient PEN (poly-ethylenenaphthalate)/ITO/ZnO/ CH3NH3PbI3 perovskite/PTAA/Au flexible planar solar cell with 1.1 V open-circuit voltage (Voc), 18.7 short-circuit current density (mA·cm-2 Jsc, 75 % fill factor (FF), and 15.4 % η for the forward scan direction and 1.1 V Voc, 18.7 mA·cm-2 Jsc, 76 % FF and 15.6 % η for the reverse scan direction under illumination of 1 Sun. |
