| 학회 |
한국재료학회 |
| 학술대회 |
2012년 가을 (11/07 ~ 11/09, 라카이샌드파인 리조트) |
| 권호 |
18권 2호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Studies on the effects of pre-treatment conditions on the properties of the CuInS2 (CIS) absorber thin films |
| 초록 |
CuInS2 (CIS) absorber thin films were prepared on soda lime glass substrates by sulfuriztion of sputtering deposited stacked Cu/In precursor thin films. The Cu-In precursor thin films were sulfurized in the mixture of H2S (5 %) + N2 (95 %) atmosphere with different post-annealing steps. The effect of different post-annealing steps such as holding times and increasing rates on the structural, compositional, chemical binding energy, optical and electrical properties of the CIS thin films were studied using FE-SEM (field-emission scanning electron microscopy), XRD (X-ray diffraction), EDS (energy dispersive spectroscopy), Raman spectroscopy, Hall measurement, respectively. The XRD, Raman, FE-SEM, Hall measurement and UV-vis results indicated that the properties of sulfurized CIS thin films were strongly related to the post-annealing steps. In particular, the microstructures of the sulfurized CIS thin films were denser without voids using post-annealing process as compared to that without post-annealing process. Further detailed analysis and discussion for effect of post-annealing steps on the properties CIS thin films will be discussed. |
| 저자 |
강명길1, 신승욱2, 한준희2, 윤재호3, 문종하1, 이정용2, 김진혁1
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| 소속 |
1전남대, 2한국과학기술원 신소재공학과, 3한국에너지기술(연) |
| 키워드 |
CuInS2 (CIS); sulfurization process; post-annealing; thin film solar cells; post-annealing process
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| E-Mail |
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