| 학회 |
한국재료학회 |
| 학술대회 |
2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 |
19권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Comparative Study Between Sputtered Ru and ALD Ru for Schottky Contact Diodes |
| 초록 |
Ruthenium-based schottky diodes on Si substrate have been investigated using two different types of deposition methods - sputtering and atomic layer deposition - under various post annealing conditions. From current-voltage analysis, Ru-Si contacts indicate that schottky behavior was converted into ohmic behavior with post annealing where temperature were 800℃ and 600℃ for PVD and ALD, respectively. Barrier heights of 0.430 eV for PVD and 0.496 eV for ALD were obtained. By X-Ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) analysis, it is shown that that Ru2Si3 phase were formed at the same annealing temperature. Based on these results, we speculate Ru2Si3 interface layer is the major reason for schottky behavior. In addition, lower temperature for schottky behavior on ALD Ru-Si diode stems from finer grains confirmed by Field Emission Scanning Electron Microscope (FE-SEM). Eventutally, Ru-Si Schottky diode can be fabricated on p-type Si with high temperature annealing. Smooth surface and higher barrier height can be obtained by using ALD technique instead of PVD technique at relatively lower temperature. |
| 저자 |
임동환1, 유동준1, 최문석1, 김도형1, 길영인1, 정철원1, 허승찬2, 최창환1
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| 소속 |
1한양대, 2SK-Hynix반도체 |
| 키워드 |
Ru; Schottky Diode
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| E-Mail |
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