| 초록 |
Recently n-type small molecule material, N,N’-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13), has attracted attentions due to its air-stability and high-performance. We fabricated n-type organic TFT on glass substrate (top-contact, bottom-gate structure) comprising CYTOPTM (~10 nm)-treated Al2O3+x dielectric operating at 7 V. Post-annealing of PCTDI-C13 deposition was carried out at temperature of 80, 110, and 140 ℃, respectively. We discuss the evolution of threshold voltage (Vth) of the TFTs undergone positive gate bias stress (PBS). Under PBS test, the TFTs reveal Vth shift described by the empirical stretched exponential equation at all temperature. In order to understand the distribution of interfacial trap with respect to post-annealing temperature, we performed photo-excited charge collection spectroscopy (PECCS) measurement resulting into increased interfacial trap charge density of state below LUMO according to post-annealing temperature. |
