| 초록 |
ZnO has received a great interest for large area optoelectronic devices of flat panel display (FPD) and as a transparent semiconductor and transparent conductive oxide (TCO) in solar cells. In this work, Mg and Ga co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % Ga on the properties of co-doped ZnO thin films have been investigated. The atomic weight % Ga was varied from 1 to 4 % in the interval of 1 % by keeping the atomic weight percent of Mg as 2 % The numbers of samples were prepared according to their different contents, which are M2%G1%ZO97%, M2%G2%ZO96%, M2%G3%ZO95%, M2%G4%ZO94% -(MGZO) respectively. A RF power of 70 W and working pressure of 1 mTorr was used for the deposition at room temperature. All of the thin films show a uniform microstructure, however a noticeable difference in the band gap energy was observed with variation in Ga atomic weight %. M2%G3%ZO95% thin film shows the overall best performance among all the thin films with lowest resistivity, carrier concentration and mobility of 1.2 x 10-3 Ωcm, 6.28 x 1020 cm-3 and 8.29 cm2V-1S-1, respectively. Also M2%G3%ZO95% thin film shows the relatively high optical band gap energy of 3.66 eV with high transmittance more than 80 % in visible region, which is prime requirement for the better solar cell performance. |
