화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2002년 가을 (10/11 ~ 10/12, 군산대학교)
권호 27권 2호, p.340
발표분야 분자전자 부문위원회
제목 Negative Photoresists Based on Cholic Acid Methacrylate Copolymerized with Methacrylates with 1,3-Dioxolane and 1,3-Dioxane Rings as Crosslinkers
초록 Copolymers of methacrylate derivatives with pendant hydroxy alicyclic acid moiety and cyclic acetal moieties, poly (2-[1,3]dioxolan-2-yl-ethyl methacrylate-co-cholic acid methacrylate) and poly (2-[1,3]dioxan-2-yl-ethyl methacrylate-co-cholic acid methacrylate), were studied for 193 nm negative photoresists. Cholic acid was introduced in order to improve etching and swelling resistances, and to impart crosslinking functionality. Cyclic acetal moieties were used as crosslinkers. The negative resists didn’t show swelling phenomena in the aqueous base developer and gave high resolution patterns.
저자 김진백1, 고종성*2, 장지현3, 이범욱**4
소속 1한국과학기술원 화학과, 2분자과학사업단(BK21), 3기능성고분자연구센터, 4*한국과학기술원 신소재공학과
키워드 Cholic Acid; Negative Photoresist; 1; 3-Dioxane; 1; 3-Dioxolane; Swelling
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