| 학회 |
한국재료학회 |
| 학술대회 |
2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 |
21권 1호 |
| 발표분야 |
C. 에너지 재료 |
| 제목 |
Effect of selenization temperature on gallium diffusion in the CIGS films fabricated by thermal annealing of CuGa/In bi-layer precursors deposited by sputtering system |
| 초록 |
Copper-Indium-Gallium-Selenium (CIGS) chalcopyrite photoabsorbers have been researched as attractive materials for absorber in solar cell. These materials have suitable band gap energy, high optical absorption (α ＞ 105cm-1) and stability. Co-evaporation is a well-developed vacuum deposition process, and ZSW presented CIGS cell efficiency of 20.8%. However, the co-evaporation system is a complex process with a high production cost and difficult to scale up. In the two-stage evaporation system, it is useful due to its good adhesion and ability to be applied in large-scale processes. Also, two-stage evaporation system has advantages in terms of compositional uniformity and surface morphology of the metallic precursors affects the quality of the absorber layer. In this study, Cu(InxGa1-x)Se2 (CIGS), thin films were produced using a two-step sputtering process consisting of precursors formation and selenization. In the first step, we prepared CuGa (Cu:Ga = 75.4:24.6 at.%) /In bi-layer precursors by direct current sputtering on Mo/soda-lime glass substrates. In the second step, the multi-stacked precursors were selenized using non-toxic Se pellets in a graphite box in which the temperature was controlled at 475-680°C during rapid thermal annealing system. We investigated the effect of selenization temperature on gallium diffusion and the crystallinity of the CIGS films. Thermal annealing significantly affected the diffusion of gallium atoms. At low temperature, segregation of gallium atoms into the CIGS/Mo interface and an absence of gallium content on the surface were observed. At high temperature, CIGS films were formed with the proper diffusion of gallium content. |
| 저자 |
Hyun Woo Do1, Young Hun Kwon2, Ye Kyun Kim1, Jae Hui Shin2, Hyung Koun Cho1
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| 소속 |
1School of Advanced Materials Science and Engineering, 2Sungkyunkwan Univ. |
| 키워드 |
photoabsorber; Cu(In; Ga)Se<SUB>2</SUB>; selenization temperature; bi-layer; gallium diffusion
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| E-Mail |
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