| 초록 |
Schottky barrier and the resistance of the device is known related to the interfacial effect on photogenerated holes and electrons. Moreover, we want to investigate the acidic in polyfluorene based-electrolytes (PFN) effect for the Schottky barrier, the resistance of the device, and the photovoltaic properties. Although the PFN is well known, PFN and acid association is rarely investigated. Therefore, the power conversion efficiencies (PCEs) were performed to investigate the effect of acidity. And we selected four materials with different acidity, where the pKa values are from -2.8 to 4.7. The Kelvin probe microscopy (KPM) and the impedence spectroscopy were performed to explain the photovoltaic parameter, the short-circuit current density (Jsc) and the fill factor (FF). Consequently, the result show well-matched association with the photovoltaic properties, where the low Jsc corresponds to the high Schottky barrier and the low FF corresponds to the low recombination resistance. |
