| 학회 |
한국고분자학회 |
| 학술대회 |
2002년 가을 (10/11 ~ 10/12, 군산대학교) |
| 권호 |
27권 2호, p.160 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Internal stress caused by thin layer deposited by plasma polymerization of hexamethyldisiloxane/O2 mixture |
| 초록 |
The use of polymeric substrate in flat panel displays (FPD) offers advantages of light-weight, flexibility, and high strength over glass substrate. In spite of these merits, application of polymeric substrate in FPD requires gas barrier properties comparable to glass substrate. Microscopically controlled thin silicon oxide (SiOx) lamination may be considered as a good candidate for gas barrier layer of polymer substrates. However, in order to prevent any cracks or delamination of hard silicon oxide layer under a stain, a film stress should be properly controlled. In this work, silicon oxide (SiOx) layer deposited on the surface of poly(ether sulfone) (PES) film and variation of internal stresses with chemical structures of the plasma-deposited layer was examined. Plasma deposition was carried out in a 13.56 MHz RF plasma reactor with oxygen/haxamethyldisiloaxne(O2/HMDSO) precursors. The plasma-deposited thin films were chemically characterized with FT-IR and ESCA. The internal stress was estimated from observed curling of deposited films. |
| 저자 |
심준호1, 윤호규2, 김양국*3, 김인선*4, 이기호*5, 곽순종**
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| 소속 |
1Division of Materials Science & Engineering, 2Korea Univ., 3*i-Components Co., 4Ltd., 5**Korea Institute of Science & Technology |
| 키워드 |
internal stress; plasma polymerization; gas barrier
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| E-Mail |
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