| 초록 |
Recently, organometal halide perovskite has attracted interest for photovoltaic application. Especially, orgnometal halide perovskites have been shown to function as the absorber, which can be easily solution-processed at low temperature using low-cost materials, in photovoltaic devices. The typical devices with organometal halide perovskite are fabricated using mesoprous TiO2 as electron transporting layer, which requires the high temperature (＞400 oC) and Spiro-OMeTAD as the hole transporting layer. However, this is unfavorable for low-cost, low temperature application on plastic substrates, and multi-stacking device structures. Here, we fabricate a single film of mixed halide solution-processed perovskite absorber CH3NH3PbI3-xClx, sandwiched between PEDOT:PSS and PC61BM. These devices can be solution-processed all of layers at low temperature (＜100 oC). By controlling concentration and thickness of perovskite, the devices can exhibit power conversion efficiency of up to 9.8%. |
