| 초록 |
Normally, CIGS absorber layer is fabricated about ~2㎛ to absorb enough light . But, we have fabricated CIGS thin film solar cells using co-evaporation where the absorber layer thickness are under ~520nm. This is done with the objective of reducing the material cost in large volume production of CIGS where the cost of the high purity metals, and especially that of indium and gallium, will become significant factors. As a result, we have fabricated a 9.41% efficient CIGS ultra thin film solar cell for a 450 nm thick. The prepared CIGS ultra thin film solar cells are characterized using XRD, SEM, EQE. Cross section SEM images shows ultra thin CIGS absorber layer (Fig. 1). And, We compared the properties of ultra thin CIGS solar cell by various thickness of absorber layers. |
