| 학회 |
한국고분자학회 |
| 학술대회 |
2007년 가을 (10/11 ~ 10/12, 일산킨텍스) |
| 권호 |
32권 2호 |
| 발표분야 |
고분자 합성 |
| 제목 |
Synthesis of Polynorbornene with Phenylethynyl Groups for the Trilayer Photoresist System |
| 초록 |
Norbornene copolymers with phenylethynyl side groups were synthesized for the buffer layer in trilayer photoresist system. The trilayer photoresist system is the novel photolithography method to fabricate dip trench patterns. It is composed of organic buffer layer, polysilan layer and resolution layer. The buffer layer acts as the etching barrier to plasma RIE. Norbornene copolymers are good candidate materials for the buffer layer. Vinyl addition polymerized norbornene has high etching selectivity compared with Novolak resin. Norbornene maleic anhydride alternating copolymers were polymerized by radical polymerization. Phenylethynyl groups with amine end functional groups were introduced as the crosslinking moiety to the copolymers. The crosslinking reactions among the phenylethynyl groups enhanced mechanical strength, thermal resistance and etching selectivity. |
| 저자 |
우희제, 오세원, 차국헌
|
| 소속 |
서울대 |
| 키워드 |
norbornene; crosslinking; trilayer photoresist system; buffer layer; RIE; etching selectivity
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| E-Mail |
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