| 학회 | 한국재료학회 |
| 학술대회 | 2003년 가을 (11/21 ~ 11/22, 연세대학교) |
| 권호 | 9권 2호 |
| 발표분야 | 반도체 |
| 제목 | Atomic layer deposition으로 증착된 Ta2O5 박막의 전도기구에 대한 UV ozone annealing 효과 |
| 초록 | High dielectric constant materials (high K) have attracted a great deal of interest because of the dramatic scaling down of DRAM capacitor reaching its physical limit in terms of reduction of thickness. Among high-K materials that can replace silicon dioxide, tantalum pentoxide (Ta2O5) thin film, with their high dielectric constant (~25) and good step coverage, is the candidate of choice. In this work, High-k Ta2O5 dielectric films were grown by an atomic-layer-deposition technique and treated under various UV ozone condition. The electrical and structural properties of each sample were investigated by HRTEM, I-V measurement, AES. From the HRTEM pictures, the UV ozone treatment was useful in crystallization, but it made current through the grain boundary. All samples exhibited Pool-Frenkel emission characteristic partially. The energy levels ΦT of traps were 0.61~0.65eV in all samples. The UV ozone treatment in the middle of Ta2O5 deposition appeared to most effective in reduction of leakage current and oxygen vacancy. The UV ozone treatment after deposition of Ta2O5 film was thought to reduce the oxygen vacancy in surface layer of Ta2O5 film, therefore it made the Ta2O5 film show direct tunneling characteristic. The UV ozone treatment after deposition had little effect in case the sample had been treated under UV ozone treatment in the middle of deposition. |
| 저자 | 엄다일, 전인상, 노상용, 황철성, 김형준 |
| 소속 | 서울대 |
| 키워드 | Ta2O5; UV; conduction mechanism |
