| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
N-Channel Organic Field-Effect Transistors Based on Substituted Indigo Derivatives with Strong Electron-Withdrawing Groups |
| 초록 |
Rapid technological progress toward the organic electronics field has developed many high-performance small-molecule semiconductors for organic field-effect transistors (OFETs). To date, most semiconducting materials have been reported to give unipolar p-channels and p-channel-dominant ambipolar charge transport because n-channel (electron-transporting) materials, which have high-LUMO energy levels, are usually very reactive in ambient air. Herein, we report on indigo derivatives with strong electron-withdrawing groups which can improve environmental stability in n-channel OFET operations. As well as ambient stability, indigos have attracted great interest due to its flexibility and environment-friendly properties. Therefore organic compounds with indigo backbones, which have very low toxicity and natural occurrence, are expected to apply as biocompatible organic semiconductors. |
| 저자 |
장문정1, 김효은2, 김경식3, 양창덕3, 오준학2
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| 소속 |
1울산과학기술원 / 포항공과대, 2포항공과대, 3울산과학기술원 |
| 키워드 |
n-channel; electron-withdrawing groups; indigo; organic field-effect transistors
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| E-Mail |
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