| 초록 |
In this talk, I will present on the influence of dielectric layers on the charge transport properties of PDPPTPT semiconductor layers. For this study, three different dielectric layers; low-k CYTOP, SiO2, and high-k p(VDF-TrFE-CTFE) were prepared to fabricate PFETs. The temperature-dependence of the field-effect mobility was analyzed using the Gaussian disorder model. It is found that the low-k dielectric suppresses the broadening of the density of localized states (DOS), which in turn results in enhanced electrical performance. On the other hand, high-k dielectrics deteriorate the charge transport properties owing to a more pronounced energetic disorder induced in the polymer semiconductor. However, as the number of accumulated charge increases at more negative VG values, the carriers fill in the localized states and thus narrow down the Gaussian DOS width. The broadening of the DOS distribution may therefore be minimized when high charge density is present in the active channel. |
