| 초록 |
Ambipolar transistors, characterized by a superposition of electron and hole transports, have attracted a large amount of research attention because of their ability to allow for more compact complementary metal-oxide-semiconductor (CMOS) circuits. Unlike more conventional unipolar transistors, whose p-type or n-type behavior is determined during fabrication, ambipolar transistors can be switched from p-type to n-type by changing the gate bias, which is useful behavior for flexible digital circuits. In this work, a strategy for facile and fine tuning of the polarity in polymeric semiconductors has been developed in order to realize high performance and commercially available ambipolar PFETs. We have utilized a polymer–polymer blend system as an active layer of ambipolar PFETs, such that the electronic configuration and charge transport characteristics can be more easily controlled. |
