| 초록 |
The stoichiometric mixture of evaporating materials for the CuInTe2/GaAs epilayer was prepared from horizontal furnace. To obtain the CuInTe2/GaAs epilayer, CuInTe2 mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610℃ and 450℃ respectively. The crystalline structure of CuInTe2/GaAs epilayer was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of CuInTe2/GaAs epilayer deduced from Hall data are 8.72×1023/m3, 3.42×10-2m2/V-s at 293K, respectively. From the photocurrent spectra, we have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr ware 0.2833 eV and 0.1200 eV, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA are identified. The binding energy of the free excitons is determined to be 0.0150 eV and the dissipation energy of the donor-bound exciton and acceptor-bound exciton is to be 0.0352 eV and 0.0932 eV, respectively. |
