| 초록 |
Single crystal CuGaSe2 layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 450 ℃ with hot wall epitaxy (HWE) system by evaporating CuGaSe2 source at 610 ℃. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal CuGaSe2 thin films measured with Hall effect by Van der Pauw method are 4.87×1017 cm-3 and 129 cm2/V·s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489 × 10-4 eV/K)T2/(T + 335 K). The voltage, current density of maxiumun power, fill factor ,and conversion efficiency of n-CdS/p-CuGaSe2 heterojunction solar cells under 80 mW/cm2 illumination were found to be 0.41 V, 21.8 mA/cm2, 0.75 and 11.17 %, respectively |
