| 학회 |
한국고분자학회 |
| 학술대회 |
2007년 봄 (04/12 ~ 04/13, 제주 ICC) |
| 권호 |
32권 1호 |
| 발표분야 |
고분자 구조 및 물성 |
| 제목 |
Structural Analysis of Nanoporous Low-Dielectric Constant SiCOH Films using Organosilane Precursors |
| 초록 |
The grazing incidence small-angle X-ray scattering (GISAXS) and specular X-ray reflectivity (XR) analysis were performed to investigate the nanoporous structure of low dielectric constant (low-k) carbon-doped silicon oxide (SiCOH) films, which were deposited with plasma enhanced chemical vapor deposition (PECVD) using vinyltrimethylsilane (VTMS), divinyldimethylsilane (DVDMS), and tetravinylsilane (TVS). And we quantitatively made a close investigation into the effect of number of vinyl group and post annealing on nanoporous structure. The presenting findings show that the organosilane containing vinyl group was quite effective to deposit SiCOH/CxHy dual phase films, and post annealing has an important role on generation of pores with the SiCOH film. |
| 저자 |
허규용1, 박성규2, 윤진환1, 진상우1, 이시우2, 이문호1
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| 소속 |
1포항공대, 2포항공대 화공과 |
| 키워드 |
low-k SiCOH film; PECVD; GISAXS; XR
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| E-Mail |
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