| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
A. Information Processing and Sensing(정보소재 및 센서) |
| 제목 |
Bipolar resistive switching behaviour of MnO2 thin film for non-volatile memory devices |
| 초록 |
The electrical properties of MnO2 based devices with stable and reproducible bipolar resistive switching behaviors were investigated in this study. The dependencies of memory behavior on cell area and operating temperature indicate that the conducting mechanism in low resistance states is due to the locally conducting filaments formed. From x-ray photoelectron spectroscopy measurements, it was observed that nonlattice oxygen ions form at the MnO2 surface. The generation and recovery of oxygen vacancies with nonlattice oxygen ions are considered to be the mechanism of resistance switching in the examined system. Bipolar resistive switching memory device with a low power operation (250 μA/±0.6 V) in a TiN/MnO2/Pt structure has been investigated. The devices show good endurance of 105 cycles at 10-ms pulse and reliable data retention Moreover, the benefits of high device yield and multilevel storage possibility make them promising in the next generation nonvolatile memory applications.
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| 저자 |
Min Kyu Yang1, Choi Sun Young2, Tae Kuk Ko1, Jeon-Kook Lee2
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| 소속 |
1Optoelectronic Materials Center, 2Korea Institute of Science and Technology |
| 키워드 |
resistive switching; RERAM; MnO2
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| E-Mail |
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