| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 봄 (04/10 ~ 04/11, 대전 컨벤션센터) |
| 권호 |
39권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Discontinuous pn-Heterojunction for OTFTs |
| 초록 |
Utilization of discontinuous pn-oragnic heterojunction is introduced as a versatile method to improve charge transport in organic thin film transistors (OTFTs). The method is demonstrated by depositing n-type dioctyl perylene tetracarboxylic diimide (PTCDI-C8) discontinuously onto base p-type pentacene OTFTs. A more pronounced impact of the discontinuous upper layer is obtained on the transistor performances when thinner base layers are employed; a ＞100-folds enhancement in hole mobility and a ＞20 V shift in threshold voltage are achieved after applying PTCDI-C8 discontinuously onto 2 nm thick pentacene thin films. Local surface potential measurements (Kelvin-probe force microscopy) and temperature-dependent transport measurements (77-300 K) reveal that the interfacial dipole formed at the pn-heterostructures effectively dopes the base pentacene films p-type and leads to a reduction in transport activation energy. |
| 저자 |
조보은1, 유성훈2, 김민우2, 이무형1, 이주희1, 공석환1, 양지혜1, 송영재2, 조정호2, 강문성1
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| 소속 |
1숭실대, 2성균관대 |
| 키워드 |
discontinuous heterojunction; organic thin-film transistors; Kelvin-probe force microscopy; depletion load inverter; non-volatile transistor memory
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| E-Mail |
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