| 학회 | 한국공업화학회 |
| 학술대회 | 2015년 가을 (11/04 ~ 11/06, 제주국제컨벤션센터(ICCJEJU)) |
| 권호 | 19권 2호 |
| 발표분야 | (나노) 웨어러블/플렉서블 나노 소재 기술 |
| 제목 | Woven resistive switching using aluminum and carbon fibers for memory devices |
| 초록 | Recently, wearable electronics such as google glasses and smart watch were launched in the market to recieve increasing attention as new generation electronic devices. In the near future, wearable electronics will be literally‘wearable’as smart clothing, smart fabrics and electronic textile form. Some researchers reported electronic textiles suitable for integration of devices using metal wire or conductive yarn. In this paper, we fabricated resistive switching memory devices using one dimensional conductive yarn for flexible electronic textile based on solution processes. Conducting fibers costructing texture were fabricated using and Al coated on carbon yarn, which act as an electrode. Carbon yarns, core of fiberes, were exposed to catalyst and immersed in aluminum precursor solution. Then Polymethylmethacrylate (PMMA) is coated on the conductive aluminium yarn using dip coating method to prevent a short between condcuting fibers and to act as a resistive switching layer. Carbon yarn was placed on the PMMA/Al coated yarn perpendiculary to form another electrode. We observed resistive switching characteristics of Carbon/PMMA/Al/Carbon fiber cross structure. Without forming process, the devices show bipolar resistive switching. The virgin device is in low resistance state. When positive bias is applied, the device switches to high resistance state. In this manner, ‘write’ and ‘erase’ operation was possible switch the resistance of the junction devices of two fibers. Interesting thing is the switching of resistivity worked even more stably without insulating PMMA layer. The device performed with switching more than 100 cycles endurance and retention properties up to 10000s only with two conducting fibers crossed. According to EDS and SEM results, we contemplate that resistive switching occurs in the Al layer which containes significant oxygen level to show native oxide layer of aluminum involved in the process. Furthermore, XPS analysis showed that new phase could be the main reason for the unique properties of resistive switching with two conducting layers which was not observed in conventional metal/metal structure. Switching mechanism with aluminum/carbon structure could be explained in this work with various analysis at the interface and by exploring different configuration of the device structure. Althoug the study is in early stage, this result shows the possibility of simple approach towards woven electronics using only flexible conductive yarns working with novel mechanism. |
| 저자 | 이미정 |
| 소속 | 국민대 |
| 키워드 | resistive switching memory; electronic textile; wovenresistive switching memory; electronic textile; woven electronics |
