| 초록 |
Flexible Gallium nitride (GaN) have great attention for flexible display and pressure sensor applications due to its thin, bendable and lightweight properties. Laser lift-off (LLO) process is one of widely used technique to transfer flexible GaN on plastic substrates. However, it is difficult to optimize the adhesive strength between GaN and its carrier substrate. GaN film can’t be transferred to plastic substrate, when there is unsuitable adhesive strength at interface. To solve this issue, we have investigated some kinds of polymers as a carrier substrate in the LLO to transfer large area GaN on flexible substrate. It is good candidates that epoxy based photoresist and polyurethane that have stress relaxation, and good adhesion with GaN surface. We analyzed transferred GaN surface using Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). By optimizing carrier substrate in LLO process, we can fabricate GaN based flexible electronics for various applications. |
