| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Solution Processed ZnxCd1-xS Buffer Layer for Vapor Transport Deposited SnS Thin Film Solar Cells |
| 초록 |
The novel Zinc Cadmium Sulfide (ZnxCd1-xS) buffer layer were deposited via environmentally friendly and low cost successive ionic-layer adsorption and reaction (SILAR) method for the tin sulfide thin film solar cells. Zinc acetate, Cadmium acetate and Sodium Sulfide were used as a Zn, Cd, and S source respectively. Alternative adsorption and reaction growth mechanism of SILAR is favorable to obtain the homogenous thin films with the variable stoichiometric composition at room temperature. By varying the concentration of Zn2+ and Cd2+ in the cation precursor solution during the SILAR deposition process, we successfully obtained a series of ZnxCd1-xS thin films with variable composition and bandgap values corresponding to the Cd/Zn ratio. Fabricated ZnxCd1-xS thin films were adopted as an n-type buffer layer for vapor transport deposited SnS thin film solar cell. Finally, SnS thin film solar cell was fabricated using ~60 nm Zn0.2Cd0.8S buffer layer. The high efficiency of 1.95 % with the higher open circuit voltage about 0.341 V was obtained using SLG/Mo/SnS/ Zn0.2Cd0.8S/i-ZnO/AZO/Al structure. |
| 저자 |
Pravin Pawar, Jaeyeong Heo
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| 소속 |
Chonnam National Univ. |
| 키워드 |
SILAR; SnS; thin film solar cells; Zinc Cadmium Sulfide; Open circuit voltage
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| E-Mail |
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