| 학회 | 한국재료학회 |
| 학술대회 | 2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 | 21권 1호 |
| 발표분야 | 제28회 신소재 심포지엄 - 콜로이드 양자점: 합성 및 응용 |
| 제목 | n- and p-type oxide semiconductors: synthesis, performance, and stability |
| 초록 | Oxide semiconductors have received much attention in displays, photovolatics, sensors, LEDs, because of their superior electrical and optical properties including transparency and high mobility. The carrier transport paths in oxide semiconductors are composed of metal ns orbitals. The overlap between neighboring metal ns orbitals in oxide semiconductors is possible even in an amorphous phase. As a result, oxide semiconductors are relatively insensitive to the presence of structural disorder and high charge carrier mobilities are achievable in amorphous structures. Until now, many studies on the development of oxide semiconducting materials have focused on n-channel layer fabrication by vacuum processes (ZnO2, SnO23, In2O34, ZnInO5, InGaO6, and InGaZnO7) and by solution processes (ZnO24, 25, In2O3, ZTO, IZO26, IGZO27). In contrast, there have been only a few reports on p-oxide because of lack of naturally p-type oxide semiconductors and difficulty in high-quality film growth. In this talk, we present the recent results on the oxide semiconductors with n- and p-type characteristics, and introduce their technical issues including simultaneous realization of high mobility and high stability. Also, we will suggest novel approach on the synthesis of stable p-type oxide. |
| 저자 | 조형균1, 백승기2, 조성운2 |
| 소속 | 1성균관대 신소재공학부, 2성균관대 신소재공학과 |
| 키워드 | Oxide; Solution process; Electrochemical deposition; high mobility |
