| 학회 |
한국화학공학회 |
| 학술대회 |
2003년 봄 (04/25 ~ 04/26, 순천대학교) |
| 권호 |
9권 1호, p.900 |
| 발표분야 |
유동층 |
| 제목 |
Silicon oxide deposition on alumina powders from TEOS by atmospheric-pressure PECVD in a circulating fluidized bed reactor |
| 초록 |
Silicon oxide deposition on alumina powders (100 ㎛) by plasma-enhanced chemical vapor deposition (PECVD) at atmospheric pressure was carried out in a circulating fluidized bed reactor (18 mm-ID ×1000 mm-high). To deposit silicon oxide on alumina powders, a mixture of tetraethoxysilicate (TEOS) and oxygen was used as the reactant gases and helium and argon gases were used as the dilute gases. A stable glow discharge under atmospheric pressure can be successfully attained at a source frequency of 13.56 MHz with insertion of a dielectric quartz tube into the inner part of the ring shaped electrodes. The amount and thickness of silicon oxide deposition were analyzed by SEM, EDS, and TEM. The surface deposition of silicon oxide from TEOS oxidation by the PECVD method produced transparent surface of alumina. The silica content increases up to 10wt% of the surface contents with increasing the treatment time (1-6 hours) and radio frequency power (120-400 W). The deposited silica is evenly distributed on the alumina surfaces. |
| 저자 |
박상민1, 정순화2, 박성희3, 김상돈1
|
| 소속 |
1한국과학기술원 생명화학공학과, 2LG화학 기술(연), 3우석대 |
| 키워드 |
PECVD; CFB; atmospheric pressure
|
| E-Mail |
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