| 학회 | 한국재료학회 |
| 학술대회 | 2009년 가을 (11/05 ~ 11/06, 포항공과대학교) |
| 권호 | 15권 2호 |
| 발표분야 | B. Nanomaterilas Technology(나노소재 기술) |
| 제목 | Effect of Various Metal Electrodes On Small-molecule Nonvolatile Memory-Cells |
| 초록 | Recently, as memory devices are becoming scaled down and highly integrated, next-generation nonvolatile memory devices are getting required. Organic memory is one of the most promising device among the next-generation memory devices, because of its nature of high integration due to its simple 1R(1 resistance) structure. It is consisted of 5 layers such as bottom electrode / small-molecule material / metal nanocrystals / small-molecule material / top electrode. We used Al, Cu, Ag and Au for metal electrodes and Alq3 (aluminum tris(8-hydroxyquinoline) for a small-molecule material to observe the memory characteristics. We firstly experimented on the device fabricated with sandwich structure of electrode / Alq3 / Ni nanocrystals surrounded by NiO / Alq3 / electrode to confirm the structures of memory-cells by SEM (scanning electron microscope) analysis. Then, we measured electrical characteristics and found that only memory-cell using Al electrode had nonvolatile memory characteristics. Then, we fabricated the samples with structure of Alq3 on various metal electrodes for chemical analysis between electrodes and small-molecule materials by XPS (X-ray photoelectron spectroscopy). In addition, we analyzed surface roughness of each electrodes by AFM (atomic force microscope) analysis to find why memory-cell using Al electrode only showed nonvolatile memory characteristics. Based on these results, such as the interface characteristics between metal electrodes and small-molecule materials, surface roughness of each electrodes and materials properties, we confirmed that Al electrode adequate to reveal nonvolatile memory characteristics. Acknowledgement *This research was supported by national research program for 0.1 Terabit Non-volatile Memory Development sponsored by Korea Ministry of Commerce, Industry and Energy |
| 저자 | Il-Hwan Ahn1, Myung-Jin Song2, Woo-Sik Nam1, Kwang-Hee Park2, Sang-Yi Lee3, Jea-Gun Park4 |
| 소속 | 1Department of Electronics and Computer Engineering, 2Hanyang Univ., 3Department of Electrical & Computer Engineering, 4Tera-bit Nonvolatile Memory Development Center |
| 키워드 | Small-molecule; memory; bistable; nonvolatile |
