| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 봄 (04/09 ~ 04/10, 대전컨벤션센터) |
| 권호 |
34권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Resistive Switching Memory Devices Composed of Binary Transition Metal Oxides Using Sol-Gel Chemistry |
| 초록 |
We describe a novel and versatile approach for preparing resistive switching memory devices based on binary transition metal oxides (TMO). Titanium isopropoxide (TTIP) was spin-deposited onto platinum-coated silicon substrates using sol-gel chemistry. The sol-gel derived layer was converted into TiO2 film after thermal annealing and then the top electrode was coated onto the TiO2 films to complete device fabrication. When an external bias was applied to the devices, switching phenomena independent of the voltage polarity were observed at low operating voltages. In addition, it was confirmed that the electrical properties of sol-gel derived devices were comparable to those of vacuum deposited devices. Furthermore, our approach can be extended into a variety of binary transition metal oxides such as niobium oxides. The reported approach offers new opportunities to prepare the binary TMO-based resistive switching memory devices allowing facile solution processing. |
| 저자 |
이찬우, 조진한
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| 소속 |
국민대 |
| 키워드 |
저항; 변화; 메모리; 전이금속 산화물; sol-gel
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| E-Mail |
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