| 초록 |
ZnOthin films were studied for non-volitile memory device application. The ZnOfilms were grown on Pt/Ti/SiO2/Si substrate byradio frequency sputtering deposition. Prepared films were analyzed by X-ray diffraction (XRD) andattributed to polycrystalline. With top electrode deposition on the films, metal-insulator-metal (MIM) structures were fabricatedand current-voltage (I-V) characteristics of the structures were measured. The structure shows reproducible and stable unipolar resistive switching (URS) after electroforming with high compliance current, regardless of the applied voltage polarity. With lowcompliance currentat electroforming, bipolar resistive switching (BRS) was also observed; this phenomenon depended on the voltage polarity. Both states were stable and reproducible over 100 cycles. Based on the results, switching mechanism based on filament theory is proposed to explain both resistive switching. |
