| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Electrical properties of chemical vapor deposited MoS2 thin films |
| 초록 |
Unlike graphene, the existence of bandgaps in transition metal dichalcogenides such as MoS2 offers an attractive possibility of using them in transistors, sensors, optoelectronic devices, and flexible systems. One of the key challenges to realize their potential is their large-area synthesis. In this presentation, we investigate the electrical properties of multilayer MoS2 thin films obtained by chemical vapor deposition (CVD). Our CVD MoS2 thin films were obtained on sapphire substrates with MoO3 and S powders as precursors. Hall Effect measurement indicated electron mobility of ~10 cm2/V·s. We then fabricated bottom-gate thin-film transistors by transferring MoS2 thin films on SiO2/Si substrates. Transistors based on our CVD thin films showed fairly uniform device performance including high on/off-current ratio (~105) and reasonable field-effect mobility (~1 cm2/V·s). These results suggest that of our CVD MoS2 thin films can provide enhanced device performance with further improvement in crystallinity and contact resistance. |
| 저자 |
Chaeyoung Hwang1, Changki Jung2, Hae In Yang3, Woong Choi4
|
| 소속 |
1School of Materials Science & Engineering, 2Kookmin Univ., 3Seoul 02707, 4Korea |
| 키워드 |
MoS2; CVD; Electrical properties
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| E-Mail |
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