학회 | 한국재료학회 |
학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
권호 | 12권 2호 |
발표분야 | 전자 재료 |
제목 | Fabrication and characteristic of organic bi-stable light-emitting device (OBLED). |
초록 | An organic bi-stable light-emitting device (OBLED) was fabricated with regular organic light-emitting device (OLED) structure attaching organic bi-stable device (OBD) using was 2-amino-4, 5-imidazoledicarbonitrile (AIDCN) with Al nano-crystals surrounded by amorphous Al2O3. The OBD switches from high-impedance state to a low-impedance state with a difference in injection current conduction at same voltage. In the structure of OBD, the middle layer, Al nano-crystals surrounded by amorphous Al2O3 was an important factor determining electrical bi-stability. Current density-voltage-luminance (J-V-L) characteristics of OBLED were obtained by sweeping voltage from 0 to 20V. The result demonstrated the threshold (Vth ), program (Vp) and erase (Ve) voltage were about 15.4, 16 and 20V, respectively. And the conduction current bi-stability was more than 1χ102. We obtained luminance of low-impedance state and high-impedance state of 40 cd/m2 and 5570 cd/m2 at 12V, respectively. In this work, we studied effect of OLED structure with OBD using AIDCN for switching device. By integrating OBD structure confirming the OLED structure was switched OLED effectively. *This research was supported by Samsung electronics |
저자 | Kim Dal Ho1, Lee Su Hwan2, Yang Hee-Doo1, Lee Gon-Sub2, Park Jea-Gun1 |
소속 | 1Nano-SOI Process Laboratory, 2Hanyang Univ. |
키워드 | Organic light-emitting diode; OBLED; OBD; OLED |