| 학회 | 한국고분자학회 |
| 학술대회 | 2004년 가을 (10/08 ~ 10/09, 경북대학교) |
| 권호 | 29권 2호, p.115 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Toward OTFT device performance enhancement through the surface control of photosensitive polyimide gate insulator |
| 초록 | A series of inherently photosensitive polyimides was prepared from a dianhydride and aromatic diamines through polycondensation reaction, followed by a chemical or thermal imidization method. The photosensitive polyimides as a gate dielectric layer were used to fabricate flexible organic thin film transistors (OTFTs) with pentacene as an active semiconductor. It is well known that the device performance of OTFTs can be controlled by gate dielectric surface treatment. In this study, we propose a new method to control the surface wetting properties of the gate dielectric by incorporating long alkyl chain in the side chain. The performance of the pentacene OTFT with the polyimide prepared based on our concept was improved a lot (Figure 1 and 2). More detailed discussion about the device performance enhancement will be given with the surface and electrical properties of the polyimide films. (a) (b) Fig. 1. Characteristic curves of pentacene OTFTs with photosensitive polyimide with(a) and without (b) alkyl side chain. |
| 저자 | 표승문, 손현삼, 전지현, 이미혜 |
| 소속 | 한국화학(연) |
| 키워드 | OTFT; Gate insulator; polyimide |
