| 초록 |
We report the synthesis of a low band gap PDPP2DT-F2T2 polymer, readily processable with non-chlorinated solvents such as toluene, o-xylene, and 1,2,4-trimethylbenzene (TMB). The electrical properties of the PDPP2DT-F2T2 films were investigated. The FET devices exhibited an ambipolar behavior with hole dominant transport. Hole mobilities increased with increasing boiling point of the non-chlorinated solvents. Thermal annealing further improved the FET performance; TMB-used FETs annealed at 200 °C yielded a highest hole mobility of 1.28 cm2V-1s-1, which is far higher than 0.43 cm2V-1s-1 obtained from chloroform-used device. This enhancement was attributed to increased interchain interactions. We also fabricated flexible TMB-processed PDPP2DT-F2T2 FETs on the PEN substrates, which demonstrated excellent carrier mobilities and negligible degradation after 300 bending cycles. |
