| 학회 | 한국고분자학회 |
| 학술대회 | 2002년 가을 (10/11 ~ 10/12, 군산대학교) |
| 권호 | 27권 2호, p.338 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Chemical Modification of Gate Dielectric Surfaces in Organic Thin Film Transistor (OTFT) through Molecular Self-Assembly |
| 초록 | Organic thin-film transistors (OTFTs) have been attracting much attention as a component of all-organic electronic devices due to their potentiality of low-cost, large-area, flexible electronic applications. In these OTFT devices, structural order of semiconducting channel materials is very important, and moreover, interface between inorganic and organic layer is also crucial to device performance. To achieve better performance of the device, some methods of surface modification including molecular self-assembly have been reported. In our bottom-contact OTFT device, to modify the dielectric surface of the device, octadecyltriethoxysilane (OTES) was first used to find optimization condition of surface modification for triethoxysilane derivatives. Then SAM fabricated from triethoxysilane derivative which has photo-alignment property, was prepared using this optimized condition. Surfaces bearing this photo-alignment SAM are expected to induce ordering of poly(3-hexylthiophene) channel layer. In this presentation, effect of SiO2 dielectric surface modification with silane derivatives on OTFT device characteristics will be discussed. |
| 저자 | 이재민1, 심홍구2, 이정익*, 도이미* |
| 소속 | 1한국과학기술원 화학과 분자과학사업단 (BK21) & 기능성 고분자 신소재 연구센터, 2*한국전자통신(연) |
| 키워드 | OTFT |
