화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2017년 봄 (04/05 ~ 04/07, 대전컨벤션센터)
권호 42권 1호
발표분야 분자전자 부문위원회 I
제목 Synthesis and Thin Film Properties of  A 4-(1,2,2-trifluorovinyloxy)benzoyl Substituted Polyimide for Gate Insulator in Thin Film Transistor
초록 The hydroxyl group containing polyimide (6FDA-HAB) was successfully synthesized with a simple one step condensation polymerization of the monomers 5,5'-(perfluoropropane-2,2-diyl) diisobenzofuran-1,3-dione (6FDA) and 3,3’-dihydroxy-4,4’-diaminobiphenyl (HAB). And then, the hydroxyl groups of 6FDA-HAB were further reacted with 4-(1,2,2-trifluorovinyloxy)benzoyl chloride (TFVOB). A synthesized novel polyimide (6FDA-HAB-TFVOB) was fully soluble in common organic solvents and side chains of polyimides are easily connected into the hexafluorocylobutane form by simple thermal treatment. Thin film properties of a novel crosslinked polymide (6FDA-HAB-TFVOB) were systematically investigated such as chemical structures, surface roughness, surface morphology, surface energy and capacitance, etc. The pentacene thin film transistor with crosslinked 6FDA-HAB-TFVOB as a gate insulator showed a field effect mobility as 0.25 cm2/Vs with almost no hysteresis behavior.
저자 기경민, 안 택
소속 경성대
키워드 Gate Insulater
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