| 초록 |
Self-assembly of the block copolymer is one of the most promising ways for the formation of nanometer-sized structures. But, the long range ordering and precise placement of the domains are needed for the practical applications. To achieve the further alignment, several techniques such as strong electric, magnetic fields or balanced surface chemistry have been applied. In this study, photolithography was used to place and align nanopatterns of the block copolymer. Polystyrene-b-poly(tert-butyl acrylate) was transformed into polystyrene-b-poly(acrylic acid) by deprotection of tert-butyl acrylate linkages in the presence of acid catalyst. Micrometer-sized patterns of the neutral surface brush were formed by photolithogarphy and nanometer-sized patterns were obtained on the neutral surface brush patterns by self-assembly of the block copolymer. The details of the processes and evaluations will be described. |
