| 학회 |
한국공업화학회 |
| 학술대회 |
2005년 가을 (10/28 ~ 10/29, 건국대학교) |
| 권호 |
9권 2호 |
| 발표분야 |
정밀화학 |
| 제목 |
Sensor Device Based on Photoluminescent Porous Silicon Chip |
| 초록 |
Nanocrystalline porous silicon films have been used as sensor chip in the device to detect the vapors of nitroaromatic compounds such as nitrobenzene (NB), 2,4-dinitrotoluene (DNT), 2,4,6-trinitrotoluene (TNT), and picric acid (PA) in gas phase. Porous silicon chips were prepared by an electrochemical etch of n-type silicon (phosphorous doped, ＜100＞ orientation). Three different types of porous silicon chips have been used for the detection of analytes. One is freshly etched porous silicon chips and others are surface-derivatized porous silicon chips with divinyltetraphenylsilole or hydrocarbon by hydrosilylation. Detection limit for the 4 ppb of TNT vapors are 15 sec. In the control experiment, the intensity of photoluminescence of a porous silicon sample was found to be stable for one hour under a flow of pure air. Further details will be presented. |
| 저자 |
조성동, 김범석, Arun Kummar Sharma, 송진우, 권형준, 권용희, 장승현, 손홍래
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| 소속 |
조선대 |
| 키워드 |
Nanocrystalline; porous silicon films; sensor chip; NB; TNT; DNT; PA
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| E-Mail |
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