| 학회 |
한국공업화학회 |
| 학술대회 |
2005년 가을 (10/28 ~ 10/29, 건국대학교) |
| 권호 |
9권 2호 |
| 발표분야 |
정밀화학 |
| 제목 |
Fabrication of Chemical Sensing Device Based on DBR Porous Silicon |
| 초록 |
Recently, number of studies for porous silicon have been investigated by many researchers. Multistructured porous silicon (PSi), distributed Bragg reflector (DBR) PSi, has been a topic of interest, because of its unique optical properties. DBR PSi were prepared by an electrochemical etch of P++-type silicon wafer of resistivity between 0.1mΩcm with square wave current density, resulting two different refractive indices. In this work, We have fabricated a simple and portable organic vapor-sensing device based on DBR porous silicon and investigated the optical characteristics of DBR porous silicon. DBR porous silicon have been characterized by FT-IR, Ocean optics 2000 spectrometer. The device used DBR PSi chip has been demonstrated as an excellent gas sensor, showing a great senstivity to a toxic vapor at room temperature. |
| 저자 |
조성동, 장승현, 김범석, 박종선, 김성기, 고영대, 손홍래
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| 소속 |
조선대 |
| 키워드 |
porous silicon; distributed Bragg reflector (DBR)
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| E-Mail |
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