| 학회 | 한국재료학회 |
| 학술대회 | 2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 | 13권 1호 |
| 발표분야 | 제12회 신소재 심포지엄 |
| 제목 | Bonding solutions for wafer-level MEMS packaging |
| 초록 | In addition to the functions of conventional semiconductor packaging, the packages for MEMS devices should provide additional functions; a cavity to hold the devices, hermetic sealing to protect them from external environment, and optical transmission to operate optical devices. Wafer-level (WL) MEMS packages are usually embodied with a wafer-level bonding between a bottom wafer including MEMS device and a cap wafer having cavity structure to hold the MEMS devices. Hermetic sealing, as well as electrical interconnection, can be simultaneously achieved by WL bonding process. The MEMS packages are fabricated using typical 3D packaging processes; formation of through-silicon-via (TSV), filling of TSV using Cu electroplating, and wafer thinning and so on. In the presentation, various kinds of bonding solutions, such as Si direct bonding, anodic bonding, and eutectic bonding, are introduced. They are developed to provide suitable bonding solutions at various temperature ranges. Among them, eutectic bonding solutions, such as Au-Sn, Cu-Sn, and Au-In system, are highlighted. Basic concept of hermetic package and measurement technique of hermeticity are also explained. Helium fine leak test is used to provide accurate standard for the order of hermetic sealing. |
| 저자 | 손윤철 |
| 소속 | 삼성종합기술원 |
| 키워드 | bonding; WL packaging; MEMS; hermetic sealing |
