| 초록 |
Graphene has been intensively investigated for applications in electronics and optoelectronics, such as transistors, logic circuits, photo-detector, solar cells, chemical and biological sensors. Graphene oxide (GO) and reduced graphene oxide (RGO), which are graphene derivatives functionalized by carboxylic acid, hydroxyl and epoxide groups, also shows wide band absorption and can be produced in a bulk quantity at a time. Recently, a few studies have employed GO and RGO for photodetector applications. For the applications in photodetection, the use of heterojunction devices can be an effective way of manipulating the electronic and optoelectronic properties of semiconductor devices based two-dimensional nanomaterials. In this work, we present electrical and photoresponse properties of GO/Si Schottky heterojunctions in which the GO layer are prepared by spraying it on a p-silicon (or n-silicon) substrate. Specifically, we demonstrate the current-voltage (I-V) characteristics of the GO-based Schottky diode under dark and illumination. We also show the temperature- and light intensity-dependent photoresponse properties in GO/Si Schottky diodes. |
